12 research outputs found
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications
A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications
A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper
Dual-control-gate floating gate transistor: a building block for circuit design
International audienc
Non-volatile reprogrammable memory
Brevet STMicroelectronics - Université de Provence, n° d'application 11/525529, US 7,675,10
Dual-control-gate floating gate transistor: a building block for circuit design
International audienc
Planar Bulk+ Technology using TiN/Hf-based gate stack for Low Power Applications.
International audienc